Name: IPN60R2K1CEATMA1
Brand: Infineon Technologies
SKU: IPN60R2K1CEATMA1TR-ND
Price: 0.7378 EUR
Availability: OutOfStock

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IPN60R2K1CEATMA1
DigiKey Part Number	IPN60R2K1CEATMA1TR-ND - Tape & Reel (TR) IPN60R2K1CEATMA1CT-ND - Cut Tape (CT) IPN60R2K1CEATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPN60R2K1CEATMA1
Description	MOSFET N-CH 600V 3.7A SOT223
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 3.7A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
Datasheet	Datasheet
EDA/CAD Models	IPN60R2K1CEATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 60µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Series CoolMOS™ CE	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
Part Status Active	Power Dissipation (Max) 5W (Tc)
FET Type N-Channel	Operating Temperature -40°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package PG-SOT223-3
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)	Package / Case TO-261-4, TO-261AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPN60R2
Rds On (Max) @ Id, Vgs 2.1Ohm @ 800mA, 10V

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