IPA65R660CFDXKSA1 is Obsolete and no longer manufactured.
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N-Channel 650 V 6A (Tc) 27.8W (Tc) Through Hole PG-TO220-3-111
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPA65R660CFDXKSA1

DigiKey Part Number
IPA65R660CFDXKSA1-ND
Manufacturer
Manufacturer Product Number
IPA65R660CFDXKSA1
Description
MOSFET N-CH 650V 6A TO220
Customer Reference
Detailed Description
N-Channel 650 V 6A (Tc) 27.8W (Tc) Through Hole PG-TO220-3-111
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4.5V @ 200µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
615 pF @ 100 V
Part Status
Obsolete
Power Dissipation (Max)
27.8W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3-111
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
660mOhm @ 2.1A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STF10N95K5STMicroelectronics0497-14552-5-ND2,47000 €Similar
STF9NM60NSTMicroelectronics1.359497-12591-5-ND2,12000 €Similar
STP10NK70ZFPSTMicroelectronics0497-12602-5-ND4,02000 €Similar
TK8A65D(STA4,Q,M)Toshiba Semiconductor and Storage0TK8A65D(STA4QM)-ND2,40000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes