FET, MOSFET Arrays

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Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
10 Picostar
MOSFET 2N-CH 10PICOSTAR
Texas Instruments
0
In Stock
161.229
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1 : 0,68000 €
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3.000 : 0,31703 €
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554 : 0,45587 €
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MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Drain
Logic Level Gate
-
-
-
2.3V @ 250µA
40nC @ 10V
-
2.5W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
10-XFLGA
10-Picostar (3.37x1.47)
SIA527DJ-T1-GE3
MOSFET 2N-CH 20V 4.5A PPAK8X8
Vishay Siliconix
2.154
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
20V
4.5A
46mOhm @ 3.9A, 4.5V
1.4V @ 250µA
12nC @ 10V
350pF @ 10V
7.8W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SI9407BDY-T1-GE3
MOSFET 2P-CH 20V 4A 8SOIC
Vishay Siliconix
1.686
In Stock
1 : 0,84000 €
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MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
20V
4A
58mOhm @ 4.8A, 4.5V
1.4V @ 250µA
26nC @ 10V
665pF @ 10V
3.1W
-50°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
RF6E065BNTCR
MOSFET N/P-CH 30V/20V 1.5A TUMT6
Rohm Semiconductor
383
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-
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MOSFET (Metal Oxide)
N and P-Channel
-
30V, 20V
1.5A, 1A
240mOhm @ 1.5A, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
1W
150°C (TJ)
-
-
Surface Mount
6-SMD, Flat Leads
TUMT6
334
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
40V
8A
19mOhm @ 8A, 10V
2.4V @ 250µA
12nC @ 10V
415pF @ 20V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
8 SO
MOSFET 2P-CH 60V 4.8A 8SO
Diodes Incorporated
690
In Stock
1 : 1,06000 €
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MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
60V
4.8A
55mOhm @ 5A, 10V
3V @ 250µA
24nC @ 10V
1293pF @ 30V
1.2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4828
MOSFET N/P-CH 60V 4.5A 8SOIC
Alpha & Omega Semiconductor Inc.
945
In Stock
1 : 1,08000 €
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MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
60V
4.5A, 3.2A
56mOhm @ 4.5A, 10V
3V @ 250µA
10.5nC @ 10V
450pF @ 30V, 930pF @30V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI6562CDQ-T1-BE3
MOSFET N/P-CH 20V 6.7A 8TSSOP
Vishay Siliconix
312
In Stock
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MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
6.7A, 6.1A
22mOhm @ 5.7A, 4.5V
1.5V @ 250µA
23nC @ 10V
850pF @ 10V
1.6W, 1.7W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Infineon Technologies
449
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1 : 1,34000 €
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MOSFET (Metal Oxide)
N and P-Channel
-
55V
4.7A, 3.4A
50mOhm @ 4.7A, 10V
1V @ 250µA
36nC @ 10V
740pF @ 25V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
8-PowerPair
MOSFET 2N-CH 80V 8.9A 8POWERPAIR
Vishay Siliconix
885
In Stock
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
80V
8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
2.4V @ 250µA
27nC @ 10V
820pF @ 40V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
MOSFET 2P-CH 55V 3.4A 8SO
Infineon Technologies
433
In Stock
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MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
55V
3.4A
105mOhm @ 3.4A, 10V
1V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MOSFET 2N-CH 60V 8A 8SO
Infineon Technologies
1.041
In Stock
1 : 1,85000 €
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
60V
8A
17.8mOhm @ 8A, 10V
4V @ 50µA
36nC @ 10V
1330pF @ 30V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
6-XLLGA
MOSFET 2N-CH 20V 0.2A 6XLLGA
onsemi
1.218
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
20V
200mA
1.5Ohm @ 100mA, 4.5V
1V @ 250µA
-
12.3pF @ 15V
125mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-XFLGA
6-XLLGA (0.9x0.65)
NexFET Series
MOSFET 2N-CH 12V 6PICOSTAR
Texas Instruments
0
In Stock
361.750
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MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Drain
-
12V
-
-
1.25V @ 250µA
10.9nC @ 4.5V
-
2.3W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-XFBGA
6-PicoStar
DMP22D5UDJ-7A
MOSFET N/P-CH 30V 0.22A SOT963
Diodes Incorporated
3.304
In Stock
380.000
Factory
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MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
30V
220mA, 200mA
1.5Ohm @ 100mA, 4.5V
1V @ 250µA
0.38nC @ 4.5V
22.6pF @ 15V
350mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-963
SOT-963
6-WDFN Exposed Pad
MOSFET 2N-CH 20V 5A 6WSON
Texas Instruments
1.180
In Stock
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate, 5V Drive
20V
5A
27mOhm @ 5A, 4.5V
1.2V @ 250µA
5.4nC @ 4.5V
469pF @ 10V
2.3W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-WDFN Exposed Pad
6-WSON (2x2)
3.000
In Stock
1 : 0,89000 €
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MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
30V
5A (Ta)
42mOhm @ 5A, 10V
2.2V @ 250µA
23nC @ 10V
720pF @ 15V
1.7W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TSMT6
MOSFET 2N-CH 30V 1A TSMT6
Rohm Semiconductor
341
In Stock
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
1A
238mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
1.25W
150°C (TJ)
-
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
8 SO
MOSFET N/P-CH 30V 6.5A 8SO
Diodes Incorporated
139
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MOSFET (Metal Oxide)
N and P-Channel
-
30V
6.5A (Ta), 4.2A (Ta)
20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
2V @ 250µA
4.6nC @ 4.5V, 5.1nC @ 4.5V
501pF @ 15V, 590pF @ 25V
1.2W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
10 Picostar
MOSFET 2N-CH 10PICOSTAR
Texas Instruments
0
In Stock
7.750
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MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Drain
Logic Level Gate
-
-
-
2.3V @ 250µA
40nC @ 10V
-
2.5W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
10-XFLGA
10-Picostar (3.37x1.47)
8 SO
MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Diodes Incorporated
299
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
60V
7.1A, 22.6A
27mOhm @ 5A, 10V
3V @ 250µA
32nC @ 30V
2127pF @ 25V
1.5W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
8 SO
MOSFET 2N-CH 60V 3.3A 8SO
Diodes Incorporated
2.500
In Stock
17.500
Factory
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MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
60V
3.3A
66mOhm @ 4.5A, 10V
3V @ 250µA
10.3nC @ 10V
502pF @ 30V
1.8W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
8-SON
MOSFET 2N-CH 20V 39A 8VSON
Texas Instruments
0
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6.458
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MOSFET (Metal Oxide)
2 N-Channel (Dual) Common Source
Logic Level Gate, 5V Drive
20V
39A
12.4mOhm @ 10A, 8V
1.4V @ 250µA
15.2nC @ 4.5V
2390pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PowerVDFN
8-VSON (3.3x3.3)
ECH8690-TL-H
MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
onsemi
431
In Stock
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MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate, 4V Drive
60V
4.7A, 3.5A
55mOhm @ 2A, 10V
-
18nC @ 10V
955pF @ 20V, 790pF @ 20V
1.5W
150°C (TJ)
-
-
Surface Mount
8-SMD, Flat Leads
8-ECH
MOSFET 2P-CH 20V 2.3A 8SO
Infineon Technologies
321
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MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
20V
2.3A
250mOhm @ 1A, 10V
3V @ 250µA
25nC @ 10V
290pF @ 15V
2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.