Name: MJ11012G
Brand: onsemi
SKU: MJ11012GOS-ND
Price: 9.6985 EUR
Availability: OutOfStock

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MJ11012G
DigiKey Part Number	MJ11012GOS-ND
Manufacturer	onsemi
Manufacturer Product Number	MJ11012G
Description	TRANS NPN DARL 60V 30A TO204
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
Datasheet	Datasheet
EDA/CAD Models	MJ11012G Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors	DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V
Mfr onsemi	Power - Max 200 W
Packaging Tray	Frequency - Transition 4MHz
Part Status Active	Operating Temperature -55°C ~ 200°C (TJ)
Transistor Type NPN - Darlington	Mounting Type Through Hole
Current - Collector (Ic) (Max) 30 A	Package / Case TO-204AA, TO-3
Voltage - Collector Emitter Breakdown (Max) 60 V	Supplier Device Package TO-204 (TO-3)
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A	Base Product Number MJ11012
Current - Collector Cutoff (Max) 1mA

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Factory Stock: 1.000

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Unit Price without VAT:	8,15000 €
Unit Price with VAT:	9,69850 €

MJ11012G